Download Battle Castles: 500 Years of Knights and Siege Warfare by Dan Snow PDF

By Dan Snow

Join TV’s Dan Snow because the totally illustrated ‘Battle Castles’ brings to exciting lifestyles a cavalcade of medieval fortifications and the clashes that grew to become empires to airborne dirt and dust and mortals into legends.

Castles and their ruins nonetheless dominate the panorama and are a continuing reminder to country time whilst violence, or the specter of it, was once the norm.

Dan Snow explores the world’s maximum medieval castles: from Dover fortress to Château Gaillard, Richard I’s castle in Normandy, and Castillo de Gibalfaro, the final leading edge of Moorish rule in Spain, to Krak des Chevaliers in Syria – an fantastic feat of engineering by means of the Crusaders.

Each castle’s tale is dramatically mentioned: the construction innovations, the guns used and lifestyle in the partitions. Spanning the globe, and utilizing the most recent CGI reconstructions, Dan Snow will get to the very middle of the bloodshed and battles of the best fortresses of the center Ages.

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Kodama, M. Horikawa, S. Saito, K. Arai, and T. Okazawa, “The solution of over-erase problem controlling poly-Si grain size modified principles for Flash memories,” IEDM Tech. , 1994, pp. 847–850. Chapter 3 DC CONDITIONS: READ Theory, compact modeling and circuit simulation The main purpose of this chapter is to introduce the basic principles and the main guidelines to have an effective compact modeling (CM) of the Floating Gate (FG) memory devices in DC conditions. In particular, according to the purposes of this book, the real possibility to implement the CMs of FG devices into Spice-like circuit simulators will be accurately investigated, being circuit simulators a useful tool to gain a basic and wide understanding of the functioning and operations of electronic devices.

When charge is injected from the polycrystalline silicon FG, the number of poly grains in the tunneling area plays an important role in determining the distribution width [37]. In this scenario, the search for higher integration goes toward new architectural solutions, the reduction of the number of contacts, and the reduction of alignment tolerances. REFERENCES 1. L. Van den Hoven, A. M. Goethals, K. Ronse, M. Van Bavel, and G. Vandenberghe, “Lithography for sub 90 nm applications,” in IEDM Tech.

The advantage of copper with respect to aluminum is the lower resistivity and the higher immunity to electromigration. The introduction of copper and of low-k dielectric layers results in a reduction of the interconnect capacitance in the range of about 30-40%. These new materials make it necessary to use a new patterning technique that is the damascene in simple and double version. In the simple version, after the contacts have been filled, usually with tungsten, the dielectric between polycrystalline silicon and 1st metal level is deposited and is patterned in the region where the copper is expected to remain.

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